Electron beam lithography

Electron beam lithography

The system uses advanced electron optics to produce a minimum spot size of 2nm from the ZrO/W (Schottky) electron source which also provides extremely stable currents over the range 30 pA to 20 nA.

The electron gun can be configured to work at accelerating voltages of 25 kV, 50 kV or 100 kV. The main beam deflection employs a 19bit DAC while the sub deflector uses a 12bit DAC operating at 25MHz.

The system has a maximum writing area of 150 x 150 mm and can handle substrate sizes of up to 200mm diameter (only tooling up to 75mm wafers is currently available).

An auto-loader provides for continuous unattended operation of up to 10 cassettes allowing high sample throughout. The overlay misalignment between electron-beam written patterns is below 25nm.

Who can use the facility?

We are committed to sharing our facilities and associated expertise with external academic and industrial collaborators. To make an enquiry please email Professor John Cunningham, e: j.e.cunningham@leeds.ac.uk.